| PART |
Description |
Maker |
| MCM64Z918TQ7 MCM64Z918TQ7R MCM64Z918TQ8 MCM64Z918T |
256K x 36 and 512K x 18 Bit ZBT Fast Static RAM
|
Motorola, Inc
|
| HM62G36256BP-5 HM62G36256 HM62G36256BP-4 |
8M Synchronous Fast Static RAM(256k-word x 36-bit)
|
HITACHI[Hitachi Semiconductor]
|
| MCM69F817ZP7R MCM69F817 MCM69F817ZP6 MCM69F817ZP6. |
256K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
|
MOTOROLA[Motorola, Inc]
|
| MCM63P819KZP150 MCM63P737KZP133 MCM63P819KZP133 MC |
128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
|
Motorola, Inc
|
| MCM63Z818TQ133R MCM63Z818TQ100 MCM63Z736TQ133R |
128K x 36 and 256K x 18 Bit Pipelined ZBT RAM Synchronous Fast Static RAM 256K X 18 ZBT SRAM, 4.2 ns, PQFP100
128K x 36 and 256K x 18 Bit Pipelined ZBT RAM Synchronous Fast Static RAM 256K X 18 ZBT SRAM, 5 ns, PQFP100
|
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| PDM41028LA10TSOITR PDM41028LA10SOITR PDM41028LA12S |
1 Megabit Static RAM 256K x 4-Bit 1兆位静RAM 256K × 4
1 Megabit Static RAM 256K x 4-Bit 1兆位静态RAM 256K × 4
|
Electronic Theatre Controls, Inc.
|
| KM641003C |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM641001B |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IDT71V256SA12PZG8 IDT71V256SA12PZGI8 IDT71V256SA12 |
Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)
3.3V, 32K X 8 Static RAM
|
Integrated Device Technology
IDT
|
| PDM41257SA7SOTY PDM41257SA7SOTR PDM41257LA7SOTY PD |
256K static RAM 256K x 1-bit
x1 SRAM
|
PARADIGM
|
| 71V416S15PHG IDT71V416L IDT71V416S |
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Single 3.3V power supply
|
Integrated Device Technology
|
| KM616U4000B |
256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
